ASTM F978-02 PDF Download

The ASTM F978-02 standard was transferred to SEMI in May 2003. This test method provides three procedures for determining the density, activation energy, and prefactor of deep-level defect centers in semiconductor depletion regions using transient-capacitance techniques.

Procedure A is the conventional approach that involves constant voltage deep-level transient spectroscopy (DLTS). In this procedure, the temperature is slowly scanned, and an exponential capacitance transient is assumed.

Procedure B is a modified version of Procedure A that includes corrections for nonexponential transients caused by heavy trap doping and incomplete charging of the depletion region.

Procedure C is a more precise referee technique that utilizes a series of isothermal transient measurements and corrects for the same sources of error as Procedure B.